Equipped with a heating mechanism suitable for the growth of thermally decomposed graphene on SiC substrates.
The design and development concept of the epitaxial graphene crystal growth device using the sic surface thermal decomposition method focuses on miniaturization and simplification of the graphene growth apparatus. It aims for high crystal quality and reproducibility of growth, as well as the addition and connectivity of surface analysis equipment, making it economically feasible for investment. The formation of graphene was confirmed from the diffraction pattern. A graphene/buffer layer has been formed. The streaks are believed to be due to the one-dimensional structure of graphene on the facets. Graphene is uniformly formed on terraces (0001) approximately 250 nm wide, and the periodic structure is a result of step punching unique to the off-substrate. The formation of graphene was also confirmed through micro-Raman measurements. The Raman spectra of the terraces (red) and facets (blue) shown in the optical microscope image of the sample surface are presented. It is a typical graphene spectrum, confirming that it is a single layer graphene based on the half-width of the 2D peak. Additionally, the D band is significantly larger on the facets, which is believed to reflect the one-dimensional structure of graphene. This was clearly observed in the mapping as well. For more details, please contact us or refer to the catalog.
- Company：ケニックス
- Price：Other
